HUAKE SMT20N60

HUAKE · FETs & Power MOSFETs · MPN SMT20N60

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Specifications

Gate Charge(Qg)55.2nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation265W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.05nF

Technical details

N-Channel 600V 20A 265W Through Hole TO-220C

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