HUAKE SMF4N65

HUAKE · FETs & Power MOSFETs · MPN SMF4N65

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Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)560pF

Technical details

N-Channel 650V 4A 33W Through Hole TO-220F-3

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