HUAKE SMF10N60

HUAKE · FETs & Power MOSFETs · MPN SMF10N60

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Specifications

Gate Charge(Qg)19.4nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.132nF
TypeN-Channel

Technical details

N-Channel 600V 10A 50W Through Hole TO-220F

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