HUAKE SMD4N65

HUAKE · FETs & Power MOSFETs · MPN SMD4N65

No reviews yet — be the first to review HUAKE SMD4N65.

Specifications

Drain to Source Voltage650V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation51W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)2.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)510pF

Technical details

N-Channel 650V 4A 51W Surface Mount TO-252

Related FETs & Power MOSFETs