HUAKE HST50N10

HUAKE · FETs & Power MOSFETs · MPN HST50N10

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)510pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation90W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)43pF
Number1 N-channel
Input Capacitance(Ciss)1.28nF
TypeN-Channel

Technical details

N-Channel 100V 50A 90W Through Hole TO-220C

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