HUAKE HST503

HUAKE · FETs & Power MOSFETs · MPN HST503

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Specifications

Gate Charge(Qg)114nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)860pF
Current - Continuous Drain(Id)172A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation220W
RDS(on)4.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)24pF
Number1 N-channel
Input Capacitance(Ciss)7.26nF
TypeN-Channel

Technical details

N-Channel 100V 172A 220W Through Hole TO-220C

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