HUAKE HST502

HUAKE · FETs & Power MOSFETs · MPN HST502

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Specifications

Gate Charge(Qg)64nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation172W
RDS(on)5.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25.7pF
Number1 N-channel
Input Capacitance(Ciss)3.81nF
TypeN-Channel

Technical details

N-Channel 100V 120A 172W Through Hole TO-220C

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