HUAKE HSD60N10

HUAKE · FETs & Power MOSFETs · MPN HSD60N10

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Specifications

Gate Charge(Qg)36.6nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)795pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation91W
RDS(on)12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)62pF
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

N-Channel 100V 60A 91W Surface Mount TO-252

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