HUAKE · FETs & Power MOSFETs · MPN HCH65R180
No reviews yet — be the first to review HUAKE HCH65R180.
| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 67pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 185W |
| RDS(on) | 210mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.17nF |
| Type | N-Channel |
N-Channel 650V 20A 185W Through Hole TO-262