HUAKE HCF60R150

HUAKE · FETs & Power MOSFETs · MPN HCF60R150

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)24A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation58W
RDS(on)150mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)4.8pF
Number1 N-channel
Input Capacitance(Ciss)1.48nF
TypeN-Channel

Technical details

N-Channel 600V 24A 58W Through Hole TO-220F

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