HUAKE · FETs & Power MOSFETs · MPN HCD65R600
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| Gate Charge(Qg) | 14.8nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 80W |
| RDS(on) | 600mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 423pF |
| Type | N-Channel |
N-Channel 650V 7A 80W Surface Mount TO-252