HUAKE · FETs & Power MOSFETs · MPN HCD65R280-S2
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 41pF |
| Current - Continuous Drain(Id) | 15A |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| RDS(on) | 240mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
| Type | N-Channel |
650V 15A 4.5V 115W 240mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS