HUAKE · FETs & Power MOSFETs · MPN HCD65R1K0
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| Gate Charge(Qg) | 10.2nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
| Type | N-Channel |
N-Channel 650V 4A 61W Surface Mount TO-252