HTCSEMI · FETs & Power MOSFETs · MPN HT80N10ARDZ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 10.6nC |
| Drain to Source Voltage | - |
| Output Capacitance(Coss) | 18pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 400mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| Number | - |
| Input Capacitance(Ciss) | 208pF |
12A 4.2V 52W 400mΩ PDFN-8(5x6) Single FETs, MOSFETs RoHS