HTCSEMI · FETs & Power MOSFETs · MPN HT65N16EVDRZ
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 1.26nC |
| Output Capacitance(Coss) | 15pF |
| Current - Continuous Drain(Id) | 9.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 34W |
| Technology | E-mode |
| RDS(on) | 0.2Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 0.21pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 91pF |
650V 9.2A 1.2V 34W 0.2Ω 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS