HTCSEMI HT5N1700ADZ

HTCSEMI · FETs & Power MOSFETs · MPN HT5N1700ADZ

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation69W
RDS(on)800mΩ
Reverse Transfer Capacitance (Crss@Vds)2.2pF
Number1 N-channel
Input Capacitance(Ciss)215pF
TypeN-Channel

Technical details

1.7kV 5A 69W Through Hole TO-247-3

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