HTCSEMI · FETs & Power MOSFETs · MPN HT52N650AKZ
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| Gate Charge(Qg) | 63nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 52A |
| Output Capacitance(Coss) | 101pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 60mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.621nF |
| Type | N-Channel |
650V 52A 176W Through Hole TO-247-4L