HTCSEMI HT39N650AKZ

HTCSEMI · FETs & Power MOSFETs · MPN HT39N650AKZ

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Specifications

Gate Charge(Qg)46nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)39A
Output Capacitance(Coss)80pF
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)79mΩ
Number1 N-channel
Input Capacitance(Ciss)1.02nF
TypeN-Channel

Technical details

650V 39A 150W Through Hole TO-247-4L

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