HTCSEMI HT36N1200AKZ

HTCSEMI · FETs & Power MOSFETs · MPN HT36N1200AKZ

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Specifications

Gate Charge(Qg)71nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)98mΩ
Number1 N-channel
Input Capacitance(Ciss)1.13nF
TypeN-Channel

Technical details

1.2kV 36A 192W Through Hole TO-247-4L

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