HTCSEMI HT2301ARTZ

HTCSEMI · FETs & Power MOSFETs · MPN HT2301ARTZ

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Specifications

Gate Charge(Qg)12nC@2.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)95mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
TypeP-Channel

Technical details

P-Channel 20V 3.5A 1W Surface Mount SOT-23

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