HTCSEMI · FETs & Power MOSFETs · MPN HT165N1200AKZ
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| Gate Charge(Qg) | 293nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 165A |
| Output Capacitance(Coss) | 202pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 517W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 17mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.407nF |
| Type | N-Channel |
1.2kV 165A 517W Through Hole TO-247-4L