HTCSEMI HT100NF80ASZ

HTCSEMI · FETs & Power MOSFETs · MPN HT100NF80ASZ

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)105nC@10V
Output Capacitance(Coss)1.22nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation173W
Reverse Transfer Capacitance (Crss@Vds)275pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.38nF
TypeN-Channel

Technical details

N-Channel 80V 100A 173W Surface Mount TO-263

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