HT(Shenzhen Jinyu Semicon) PTY30N150

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTY30N150

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)118nC@10V
Output Capacitance(Coss)327pF
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation121W
Reverse Transfer Capacitance (Crss@Vds)770pF
RDS(on)1.4mΩ@10V;2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.23nF
TypeN-Channel

Technical details

30V 150A 2.5V 121W 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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