HT(Shenzhen Jinyu Semicon) PTS2012

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTS2012

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)39nC@10V
Current - Continuous Drain(Id)12A
Output Capacitance(Coss)229pF
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2W
RDS(on)5.4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)158pF
Number1 N-channel
Input Capacitance(Ciss)1.56nF
TypeN-Channel

Technical details

20V 12A 1.2V 2W 5.4mΩ@4.5V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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