HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTQ2025D
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 24nC@4.5V |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain(Id) | 25A |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 274pF |
| RDS(on) | 5.8mΩ@4.5V;6.9mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.89nF |
| Type | N-Channel |
20V 25A 900mV 21W 2 N-Channel N-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS