HT(Shenzhen Jinyu Semicon) PTQ10HN03B

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTQ10HN03B

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))1V;2.5V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)278pF
RDS(on)3.1mΩ@10V;4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.93nF
TypeN-Channel

Technical details

30V 100A 54W 1 N-channel N-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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