HT(Shenzhen Jinyu Semicon) PTP12HG08

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTP12HG08

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)70.8nC@10V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)694pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation176W
Reverse Transfer Capacitance (Crss@Vds)27.5pF
RDS(on)4.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.31nF
TypeN-Channel

Technical details

85V 120A 4V 176W 4.1mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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