HT(Shenzhen Jinyu Semicon) PTN10HN03

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTN10HN03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)42nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)315pF
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation88W
RDS(on)2.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)296pF
Number1 N-channel
Input Capacitance(Ciss)2.56nF
TypeN-Channel

Technical details

30V 100A 1.6V 88W 2.9mΩ@10V 1 N-channel N-Channel PDFN5X6 Single FETs, MOSFETs RoHS

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