HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTM1816DE
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| Gate Charge(Qg) | 24nC@4.5V |
|---|---|
| Drain to Source Voltage | 18V |
| Output Capacitance(Coss) | 284pF |
| Current - Continuous Drain(Id) | 16A |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF |
| RDS(on) | 4.1mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.773nF |
| Type | N-Channel |
18V 16A 700mV 3W 4.1mΩ@4.5V 2 N-Channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS