HT(Shenzhen Jinyu Semicon) PTH150N04

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTH150N04

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)116pF
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)902pF
TypeN-Channel

Technical details

150V 4A 2V 4W 160mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS

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