HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD80N06
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 370pF |
| Current - Continuous Drain(Id) | 80A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.1nF |
| Type | N-Channel |
N-Channel 60V 80A 100W Surface Mount TO-252