HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD60N02B
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Output Capacitance(Coss) | 407pF |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 218pF |
| RDS(on) | 4.1mΩ@4.5V;5.2mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
20V 60A 650mV 57W 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS