HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD50N06
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 158pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 85W |
| RDS(on) | 14mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.05nF |
| Type | N-Channel |
N-Channel 60V 50A 85W Surface Mount TO-252-2L