HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD4N65
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| Gate Charge(Qg) | 10.2nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 46pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 39W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 2.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
| Type | N-Channel |
650V 4A 3V 39W 2.6Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS