HT(Shenzhen Jinyu Semicon) PTD30N120

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD30N120

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)89nC@10V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)479pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)433pF
RDS(on)2.4mΩ@10V;4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.35nF
TypeN-Channel

Technical details

30V 120A 1.5V 115W 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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