HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD10HN03
No reviews yet — be the first to review HT(Shenzhen Jinyu Semicon) PTD10HN03.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 315pF |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 88W |
| Reverse Transfer Capacitance (Crss@Vds) | 296pF |
| RDS(on) | 2.6mΩ@10V;4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.56nF |
| Type | N-Channel |
30V 100A 1.6V 88W 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS