HT(Shenzhen Jinyu Semicon) PTD100P30

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PTD100P30

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)30A
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)35mΩ@10V;45mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.4nF
TypeP-Channel

Technical details

100V 30A 104W 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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