HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGT12N028H
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| Gate Charge(Qg) | 149nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 1.26nF |
| Current - Continuous Drain(Id) | 250A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.8nF |
| Type | N-Channel |
120V 250A 4V 278W 2.2mΩ@10V 1 N-channel N-Channel TOLL-8L Single FETs, MOSFETs RoHS