HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGT10N015H
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| Gate Charge(Qg) | 152nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 433A |
| Output Capacitance(Coss) | 3.51nF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 536W |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.78nF |
| Type | N-Channel |
100V 433A 4V 536W 1.2mΩ@10V 1 N-channel N-Channel TOLL-8L Single FETs, MOSFETs RoHS