HT(Shenzhen Jinyu Semicon) PGT08N012H

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGT08N012H

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)152nC@10V
Output Capacitance(Coss)3.21nF
Current - Continuous Drain(Id)450A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation486W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)0.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.6nF
TypeN-Channel

Technical details

85V 450A 4V 486W 0.9mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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