HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGQ04N070
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| Gate Charge(Qg) | 14.7nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 309pF |
| Current - Continuous Drain(Id) | 50A |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 28W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF |
| RDS(on) | 5.1mΩ@10V;7.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 863pF |
| Type | N-Channel |
40V 50A 1.8V 28W 1 N-channel N-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS