HT(Shenzhen Jinyu Semicon) PGP10N042

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGP10N042

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Specifications

Gate Charge(Qg)74.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Output Capacitance(Coss)1.506nF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation156W
RDS(on)3.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)73.36pF
Number1 N-channel
Input Capacitance(Ciss)4.701nF
TypeN-Channel

Technical details

100V 120A 3V 156W 3.9mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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