HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGP10N037
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| Gate Charge(Qg) | 131nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 202A |
| Output Capacitance(Coss) | 771pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 205W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.2nF |
| Type | N-Channel |
100V 202A 4V 205W 3.1mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS