HT(Shenzhen Jinyu Semicon) PGN04N070

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGN04N070

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Specifications

Gate Charge(Qg)14.7nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)309pF
Current - Continuous Drain(Id)50A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)5.8pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)863pF
TypeN-Channel

Technical details

40V 50A 1.8V 34W 5.5mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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