HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGN04N060
No reviews yet — be the first to review HT(Shenzhen Jinyu Semicon) PGN04N060.
| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 545pF |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.1pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 887pF |
| Type | N-Channel |
40V 60A 2.2V 40W 4.8mΩ@10V 1 N-channel N-Channel PDFN5X6-8L Single FETs, MOSFETs RoHS