HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGD10N270
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| Gate Charge(Qg) | 11.1nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 198pF |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 53W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.3pF |
| RDS(on) | 18mΩ@10V;25mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 617pF |
| Type | N-Channel |
100V 35A 2.5V 53W 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS