HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN PGD10N100
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 495pF |
| Current - Continuous Drain(Id) | 65A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 90W |
| RDS(on) | 7.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.14nF |
| Type | N-Channel |
100V 65A 2V 90W 7.8mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS