HT(Shenzhen Jinyu Semicon) BSS123 SA

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN BSS123 SA

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Specifications

Gate Charge(Qg)2.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)3.4pF
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 100V 0.17A 0.36W Surface Mount SOT-23

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