HT(Shenzhen Jinyu Semicon) BSS123

HT(Shenzhen Jinyu Semicon) · FETs & Power MOSFETs · MPN BSS123

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Specifications

Gate Charge(Qg)1.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)7pF
Current - Continuous Drain(Id)170mA
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation350mW
RDS(on)6Ω@10V;10Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)3.4pF
Number1 N-channel
Input Capacitance(Ciss)73pF
TypeN-Channel

Technical details

N-Channel 100V 170mA 350mW Surface Mount SOT-23

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