HL S8N10

HL · FETs & Power MOSFETs · MPN S8N10

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)28.9pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)140mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)206pF
TypeN-Channel

Technical details

N-Channel 100V 6.5A 2W Surface Mount SOT-89-3L

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